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IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
TO-247 AD (IXFH) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 10 V; I D = 40 A, pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 50 V, I D = 30 A
R G = 1 W (External)
30
40
4400
2000
1200
40
70
130
55
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
240
nC
Dim. Millimeter
Inches
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 40 A
30
120
0.25
0.42
nC
nC
K/W
K/W
A
B
C
D
E
F
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4 6.2
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
G
H
1.65 2.13
- 4.5
0.065 0.084
- 0.177
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
J
K
L
M
1.0 1.4
10.8 11.0
4.7 5.3
0.4 0.8
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
I S
V GS = 0 V
76
A
N
1.5 2.49
0.087 0.102
I SM
V SD
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
304
1.5
A
V
t rr
I F = 25 A, -di/dt = 100 A/ m s, T J = 25 ° C
V R = 25 V T J = 125 ° C
150
250
ns
ns
? 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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